While several studies have investigated Au NP absorption coefficients, doped semiconductor ... applications mentioned above require high absorption coefficient materials to be feasible and given that doped metal oxide NCs show promise as strong IR absorbers, it is important to quantitatively investigate their optical extinction properties. Information about how to use the RightsLink permission system can be found at Information. Quantitative Determination of the Carboxyl Groups on Individual Nanoparticles by Acid-Base Titrimetry. Semiconductor physics, quantum electronics and optoelectronics. At λm, the transfer matrix calculates A″′ using κ(λm‐1) as the initial guess of the attenuation coefficient. While that problem could in principle be solved by using a material was pretty small band gap energy, the result would be a low operation voltage, i.e., a low energy output per delivered carrier. In other words, one cannot simultaneously fulfill energy conservation and momentum conservation – except if the additional emission of a phonon is involved, which can provide the required change of electron momentum while having little impact on the energy balance (see Figure 2). Jacek Jasieniak, Lisa Smith, Joel van Embden, and Paul Mulvaney , Marco Califano . [26]. Photoreduction. We reviewed the nonlinear absorption coefficients and nonlinear refractive indices for the glasses containing copper and silver nanoparticles, which were measured using the transmission and refraction Z-scan techniques. Find more information on the Altmetric Attention Score and how the score is calculated. Lisa M. Harris, Eric C. Y. Tam, Struan J. W. Cummins, Martyn P. Coles, and J. Robin Fulton . Maja Stanisavljevic, Sona Krizkova, Marketa Vaculovicova, Rene Kizek, Vojtech Adam. To exemplify this, the maximum difference in EQE of 60 and 215 nm PCE12‐ITIC devices in the sub‐bandgap region is 20‐fold, whereas the fit‐error for one thickness is at most two times the experimental EQE, i.e., a maximum relative percentage error of 100%. After you have modified some values, click a "calc" button to recalculate the field left of it. In the case of A = A′, IQEVIS would be spectrally flat, which is impossible to achieve given the experimental errors and uncertainties related to optical constants and thicknesses of other device layers. This is mainly caused by a strong dispersion of n for PCE12‐ITIC (see refractive indices in Figure 1). In Figure 3a,b, the numerically obtained α is scaled to compare its spectral line shape to the EQE spectra of devices with different active layer thicknesses t. The assumption A ≈ αt, according to which the spectral line shape of α follows A and therefore the EQE, is not applicable to any PCE12‐ITIC device without greatly over‐ or underestimating α. The precision of this technique has been exploited in various works, for example, Klein et al. To conclude this phase of the analysis, the assumption of A ≈ αt leads to an insignificant error in determining ECT and reorganization energy for the material system PBTTT‐PC71BM for layer thicknesses below 190 nm. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers. Either collimating by lenses or sandwiching between fiber ferrules can be used for the insertion of the device. It becomes clear that the EQE line shape is strongly dependent on the active layer thickness and hence assuming that A ≈ αt can only be true for a small range of thicknesses. In Figure S5b of the Supporting Information, the current response of a 105 nm thick PCE12‐ITIC device in the dark is depicted as the noise‐equivalent EQE of the measurement system utilized in this work.


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